HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuou.
• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls Advantages
• Easy to mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN44N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFN44N50U2 |
IXYS |
HiPerFET Power MOSFETs | |
3 | IXFN44N50U3 |
IXYS |
Power MOSFET | |
4 | IXFN44N100P |
Littelfuse |
Power MOSFET | |
5 | IXFN44N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
6 | IXFN44N100Q3 |
IXYS Corporation |
Power MOSFET | |
7 | IXFN44N60 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
8 | IXFN44N80 |
IXYS Corporation |
Power MOSFET | |
9 | IXFN44N80P |
IXYS Corporation |
Power MOSFET | |
10 | IXFN44N80Q3 |
IXYS |
Power MOSFET | |
11 | IXFN40N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
12 | IXFN40N60 |
IXYS Corporation |
HiPerFET Power MOSFET |