PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN44N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 37A 220mΩ 300ns Test Conditions TJ = 25°C to 150°C .
z z z t = 1min t = 1s z z Mounting torque Terminal connection torque z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Weight Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ.
IXFN44N100P 1000 V, 220 mΩ PolarTM HiperFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (SOT-227B) baseplate D D .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN44N100Q3 |
IXYS Corporation |
Power MOSFET | |
2 | IXFN44N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFN44N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
4 | IXFN44N50U2 |
IXYS |
HiPerFET Power MOSFETs | |
5 | IXFN44N50U3 |
IXYS |
Power MOSFET | |
6 | IXFN44N60 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
7 | IXFN44N80 |
IXYS Corporation |
Power MOSFET | |
8 | IXFN44N80P |
IXYS Corporation |
Power MOSFET | |
9 | IXFN44N80Q3 |
IXYS |
Power MOSFET | |
10 | IXFN40N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
11 | IXFN40N60 |
IXYS Corporation |
HiPerFET Power MOSFET | |
12 | IXFN40N90P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |