HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 2.
International standard packages isolation miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications DC-DC converters rated 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.28 V V nA mA mA W Ba.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN34N80 |
IXYS Corporation |
Power MOSFET | |
2 | IXFN340N06 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
3 | IXFN340N07 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
4 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFN30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
6 | IXFN30N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
7 | IXFN320N17T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
8 | IXFN32N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
9 | IXFN32N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFN32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
11 | IXFN32N60 |
IXYS |
HiPerFET Power MOSFET | |
12 | IXFN32N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |