IXFN34N100 |
Part Number | IXFN34N100 |
Manufacturer | IXYS Corporation |
Description | HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com... |
Features |
International standard packages isolation
miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters rated
50/60 Hz, RMS IISOL £ 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.28 V V nA mA mA W
Ba... |
Document |
IXFN34N100 Data Sheet
PDF 133.13KB |
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