IXFN34N100 IXYS Corporation Power MOSFET Datasheet, en stock, prix

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IXFN34N100

IXYS Corporation
IXFN34N100
IXFN34N100 IXFN34N100
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Part Number IXFN34N100
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com...
Features • International standard packages isolation • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters rated 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.28 V V nA mA mA W • • • • Ba...

Document Datasheet IXFN34N100 Data Sheet
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