HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Termi.
International standard packages miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 4 V V nA mA mA mW VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN340N06 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
2 | IXFN34N100 |
IXYS Corporation |
Power MOSFET | |
3 | IXFN34N80 |
IXYS Corporation |
Power MOSFET | |
4 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFN30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
6 | IXFN30N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
7 | IXFN320N17T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
8 | IXFN32N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
9 | IXFN32N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFN32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
11 | IXFN32N60 |
IXYS |
HiPerFET Power MOSFET | |
12 | IXFN32N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |