IXFK94N50P2 - IXYS Corporation

IXFK94N50P2 Power MOSFET

Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P2 VDSS = ID25 = RDS(on) ≤ 500V 94A 55mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C.

Features

z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Battery Chargers z Uninterrupted Power Supplies z AC and DC Motor Drives z High Speed Power Switching Application © 2011 IXYS CORPORATION, All Rights Reserved DS100215B(9/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input .