IXFK120N20 - IXYS Corporation

IXFK120N20 HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC TC TC TC = 25°C (MOSFET chip cap.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
• ID25 Note 1 Applications
• DC-DC converters
• Battery chargers.