IXFH67N10 - IXYS Corporation

IXFH67N10 HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS(on) 67 A 25 mW 75 A 20 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC.

Features

International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 TJ = 25°C TJ = 125°C 250 1 0.025 0.020 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Applications DC-DC converters Synchrono.