IXFH68N20 - IXYS Corporation

IXFH68N20 Power MOSFET

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Co.

Features

• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low • • • • • • • • • • • • rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 1.13/10 Nm/lb.in. Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and reson.