IXFH69N30P - IXYS

IXFH69N30P PolarHT HiPerFET Power MOSFET

PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25.

Features

z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb.in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 49 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power densi.