Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 60N20F IXFT 60N20F VDSS ID25 RDS(on) = = = 200V 60A 38mΩ trr ≤ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg T.
l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 125°C 50 µA 1.5 mA 38 m Ω l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 l l l l l DC-DC converters Switched-mode and resona.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH60N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFH60N25Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
3 | IXFH60N50P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFET | |
4 | IXFH60N60X |
IXYS |
Power MOSFET | |
5 | IXFH60N60X |
INCHANGE |
N-Channel MOSFET | |
6 | IXFH60N65X2 |
IXYS |
Power MOSFET | |
7 | IXFH60N65X2 |
INCHANGE |
N-Channel MOSFET | |
8 | IXFH66N20Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
9 | IXFH67N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFH67N10 |
IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
11 | IXFH68N20 |
IXYS Corporation |
Power MOSFET | |
12 | IXFH69N30P |
IXYS |
PolarHT HiPerFET Power MOSFET |