IXFH6N100 - IXYS

IXFH6N100 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A trr £ 250 ns R DS(on) 1.8 W 2.0 W Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TO-247 AD (IXFH) T.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays Advantages
• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
• Space savings
• High power density IXYS reserves the right to chan.