IXFH16N90Q - IXYS Corporation

IXFH16N90Q HiPerFET Power MOSFETs Q-Class

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V = 16 A ID25 RDS(on) = 0.65 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R.

Features

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 5.0 ±200 TJ = 25°C TJ = 125°C 50 2 0.65 V V nA mA mA W
• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier Advantages
• Easy to mount
• Space savings
• High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
• ID25 Pulse test, t £ 300 .