IXFH16N90 - IXYS

IXFH16N90 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC =.

Features

l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 250 0.65 V V nA µA µA Ω l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V l l l DC-DC converters Battery chargers Switched-.