IXFH10N100 - IXYS Corporation

IXFH10N100 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 V DSS IR D25 DS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr £ 250 ns Maximum Ratings TO-247 AD (IXFH) V DSS VDGR VGS VGSM ID25 I.

Features

q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 3 mA GS D VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5
• ID25 10N100 12N100 13N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % 1000 2.0 V 4.