IXFH16N80P - IXYS Corporation

IXFH16N80P Power MOSFET

PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC.

Features

z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % www.DataSheet4U.net © 2006 IXYS All rights reserved DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 9 16 4600 VGS = 0 V, VDS = 25 V, f = 1 MHz 330 23 27 VGS = 10 V, VDS = VDSS, ID = 0.5 ID25.