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Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RM.
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Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V
Applications
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± 200 nA 5 μA 250 μA 8.0 9.6 mΩ
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VGS = 10V, ID = 0.5
• ID25, Note 1
DC-DC converters Battery chargers Switched-mode and resona.
IXFH160N15T - INCHANGE
isc N-Channel MOSFET Transistor IXFH160N15T ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On.
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|---|---|---|---|---|
| 1 | IXFH160N15T2 |
INCHANGE |
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| 2 | IXFH160N15T2 |
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| 4 | IXFH16N50P |
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| 5 | IXFH16N80P |
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| 6 | IXFH16N90 |
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| 10 | IXFH102N15T |
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| 11 | IXFH10N100 |
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