IXBH9N140G - IXYS Corporation

IXBH9N140G High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ .

Features

• High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
• MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage
• Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
• International standard package JEDEC TO-247 AD
• Reverse conducting capability C4 Applications
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• Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts 1.15/10 Nm/lb.in. 6 g Symbol Conditions .