IXBH16N170A - IXYS Corporation

IXBH16N170A High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient.

Features

• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ .