IXBH15N160 - IXYS Corporation

IXBH15N160 (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL M.

Features

• International standard package JEDEC TO-247 AD
• High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
• Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
• MOS Gate turn-on - drive simplicity
• Reverse conducting capability VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8
•VCES Clamped inductive load, L = 100 mH TC = 25°C Applications
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• Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts .