IXBH6N170 - IXYS

IXBH6N170 BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 12.

Features

z High blocking voltage z Integrated Anti-parallel diode z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 6A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 6A, VGE = 15V, VCE = 0.5
• VCES Qgc td(.