IS66WVE1M16TCLL - ISSI

IS66WVE1M16TCLL 16Mb Async/Page PSRAM

IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving mod.

Features

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 60ns, 70ns
 Intrapage Read access : 25ns
 Low Power Consumption
 Asynchronous Opera.