PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous m.
Asynchronous and page mode interface
Dual voltage rails for optional performance
VDD 1.8V, VDDQ 1.8V
Page mode read access
Interpage Read access : 70ns
Intrapage Read access : 20ns
Low Power Consumption
Asynchronous Operation < 30 mA
Intrapage Read < 18mA
Standby < 150 uA (max.)
Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
Temperature Controlled Refresh
Partial Array Refresh
Deep power-down (DPD) mode
Operating temperature Range Industrial -40°C~85°C
Package: 48-ball TFBGA
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
2 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
3 | IS66WVE2M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
4 | IS66WVE2M16BLL |
ISSI |
3.0V Core Async/Page PSRAM | |
5 | IS66WVE2M16EALL |
ISSI |
32Mb Async/Page PSRAM | |
6 | IS66WVE2M16EBLL |
ISSI |
32Mb Async/Page PSRAM | |
7 | IS66WVE2M16ECLL |
ISSI |
32Mb Async/Page PSRAM | |
8 | IS66WVE2M16TALL |
ISSI |
32Mb Async/Page PSRAM | |
9 | IS66WVE2M16TBLL |
ISSI |
32Mb Async/Page PSRAM | |
10 | IS66WVE2M16TCLL |
ISSI |
32Mb Async/Page PSRAM | |
11 | IS66WVE1M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
12 | IS66WVE1M16BLL |
ISSI |
3.0V Core Async/Page PSRAM |