IS66WVE1M16ALL - ISSI

IS66WVE1M16ALL 1.8V Core Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 16Mb DRAM core device is organized as 1 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous m.

Features

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 VDD 1.8V, VDDQ 1.8V
 Page mode read access
 Interpage Read access : 70ns
 Intrapage Read access : 20ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 18mA
 Standby < 80 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Range Industrial -40°C~85°C
 Package: 48-ball TFBGA, 48-pin TSOP-I Notes : 1. The 48-pin TSOP-I package option is not yet available.