IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving mod.
Asynchronous and page mode interface
Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
Page mode read access
Interpage Read access : 60ns, 70ns
Intrapage Read access : 25ns
Low Power Consumption
Asynchronous Opera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS66WVE1M16TBLL |
ISSI |
16Mb Async/Page PSRAM | |
2 | IS66WVE1M16TCLL |
ISSI |
16Mb Async/Page PSRAM | |
3 | IS66WVE1M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
4 | IS66WVE1M16BLL |
ISSI |
3.0V Core Async/Page PSRAM | |
5 | IS66WVE1M16EALL |
ISSI |
16Mb Async/Page PSRAM | |
6 | IS66WVE1M16EBLL |
ISSI |
16Mb Async/Page PSRAM | |
7 | IS66WVE1M16ECLL |
ISSI |
16Mb Async/Page PSRAM | |
8 | IS66WVE2M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
9 | IS66WVE2M16BLL |
ISSI |
3.0V Core Async/Page PSRAM | |
10 | IS66WVE2M16DALL |
ISSI |
1.8V Core Async/Page PSRAM | |
11 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
12 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM |