PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous m.
Asynchronous and page mode interface
Dual voltage rails for optional performance
VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
Page mode read access
Interpage Read access : 70ns
Intrapage Read access : 20ns
Low Power Consumption
Asynchronous Operation < 30 mA
Intrapage Read < 18mA
Standby < 180 uA (max.)
Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
Temperature Controlled Refresh
Partial Array Refresh
Deep power-down (DPD) mode
Operating temperature Range Industrial -40°C~85°C
Packages: 48-ball TFBGA, 48-pin TSOP-I
Notes : 1. The 48-pin TSOP-I package option is not ye.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS66WVE2M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
2 | IS66WVE2M16DALL |
ISSI |
1.8V Core Async/Page PSRAM | |
3 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
4 | IS66WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
5 | IS66WVE2M16EALL |
ISSI |
32Mb Async/Page PSRAM | |
6 | IS66WVE2M16EBLL |
ISSI |
32Mb Async/Page PSRAM | |
7 | IS66WVE2M16ECLL |
ISSI |
32Mb Async/Page PSRAM | |
8 | IS66WVE2M16TALL |
ISSI |
32Mb Async/Page PSRAM | |
9 | IS66WVE2M16TBLL |
ISSI |
32Mb Async/Page PSRAM | |
10 | IS66WVE2M16TCLL |
ISSI |
32Mb Async/Page PSRAM | |
11 | IS66WVE1M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
12 | IS66WVE1M16BLL |
ISSI |
3.0V Core Async/Page PSRAM |