The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-.
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• Auto refresh (CBR)
• 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS45S16400C1 |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
2 | IS45S16400E |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
3 | IS45S16400J |
ISSI |
SYNCHRONOUS DYNAMIC RAM | |
4 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
5 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM | |
6 | IS45S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM | |
7 | IS45S16100H |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM | |
8 | IS45S16160C |
Integrated Silicon Solution |
256 Mb Single Data Rate Synchronous DRAM | |
9 | IS45S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
10 | IS45S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM | |
11 | IS45S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM | |
12 | IS45S16160L |
ISSI |
256Mb SYNCHRONOUS DRAM |