IS45S16160G 256Mb SYNCHRONOUS DRAM Datasheet

IS45S16160G 256Mb SYNCHRONOUS DRAM

IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length .

Features

• Clock frequency: 200,166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capabilit.

No.	Partie #	Fabricant	Description
1	IS45S16160C	Integrated Silicon Solution	256 Mb Single Data Rate Synchronous DRAM
2	IS45S16160D	Integrated Silicon Solution	256-MBIT SYNCHRONOUS DRAM
3	IS45S16160J	ISSI	256Mb SYNCHRONOUS DRAM
4	IS45S16160L	ISSI	256Mb SYNCHRONOUS DRAM
5	IS45S16100C1	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
6	IS45S16100E	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
7	IS45S16100F	ISSI	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
8	IS45S16100H	ISSI	16Mb SYNCHRONOUS DYNAMIC RAM
9	IS45S16320B	Integrated Silicon Solution	32M x 16 512Mb SYNCHRONOUS DRAM
10	IS45S16320D	ISSI	512Mb SDRAM
11	IS45S16320F	ISSI	512Mb SDRAM
12	IS45S16400C1	Integrated Silicon Solution	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS45S16160G - ISSI

IS45S16160G 256Mb SYNCHRONOUS DRAM

Features

Related Product