IS45S16400E - Integrated Silicon Solution

IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDq GNDq NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Sup.

Features

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 16ms (A2 grade) or 64ms (A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge co.