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- Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (program.
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 04/02/09 1 IS45S83200C IS45S16160C www.DataSheet4U.com CLK CKE /CS /RAS /C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS45S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
|
| 2 | IS45S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
| 3 | IS45S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
| 4 | IS45S16160L |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
| 5 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 6 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
|
| 7 | IS45S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
|
| 8 | IS45S16100H |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM |
|
| 9 | IS45S16320B |
Integrated Silicon Solution |
32M x 16 512Mb SYNCHRONOUS DRAM |
|
| 10 | IS45S16320D |
ISSI |
512Mb SDRAM |
|
| 11 | IS45S16320F |
ISSI |
512Mb SDRAM |
|
| 12 | IS45S16400C1 |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
|