IS45S16320D 512Mb SDRAM Datasheet

IS45S16320D 512Mb SDRAM

IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/4.

Features

• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. PACKAGE.

No.	Partie #	Fabricant	Description
1	IS45S16320B	Integrated Silicon Solution	32M x 16 512Mb SYNCHRONOUS DRAM
2	IS45S16320F	ISSI	512Mb SDRAM
3	IS45S16100C1	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
4	IS45S16100E	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
5	IS45S16100F	ISSI	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
6	IS45S16100H	ISSI	16Mb SYNCHRONOUS DYNAMIC RAM
7	IS45S16160C	Integrated Silicon Solution	256 Mb Single Data Rate Synchronous DRAM
8	IS45S16160D	Integrated Silicon Solution	256-MBIT SYNCHRONOUS DRAM
9	IS45S16160G	ISSI	256Mb SYNCHRONOUS DRAM
10	IS45S16160J	ISSI	256Mb SYNCHRONOUS DRAM
11	IS45S16160L	ISSI	256Mb SYNCHRONOUS DRAM
12	IS45S16400C1	Integrated Silicon Solution	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS45S16320D - ISSI

IS45S16320D 512Mb SDRAM

Features

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