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IS45S16320D |
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| Part Number | IS45S16320D |
| Manufacturer | ISSI |
| Description | IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals ... |
| Features |
• Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. PACKAGE... |
| Document |
 IS45S16320D Data Sheet
PDF 1.33MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS45S16320B |
Integrated Silicon Solution |
32M x 16 512Mb SYNCHRONOUS DRAM |
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| 2 | IS45S16320F |
ISSI |
512Mb SDRAM |
|
| 3 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 4 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
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| 5 | IS45S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
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