IS42S16160J 256Mb SYNCHRONOUS DRAM Datasheet

IS42S16160J 256Mb SYNCHRONOUS DRAM

IS42S83200J, IS42S16160J IS45S83200J, IS45S16160J 32Meg x 8, 16Meg x16 SEPTEMBER 2020 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1.

Features

• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst ter.

No.	Partie #	Fabricant	Description
1	IS42S16160	Integrated Silicon Solution	16Meg x16 256-MBIT SYNCHRONOUS DRAM
2	IS42S16160B	Integrated Silicon Solution	256-MBIT SYNCHRONOUS DRAM
3	IS42S16160C	ISSI	256Mb Single Data Rate Synchronous DRAM
4	IS42S16160D	Integrated Silicon Solution	256-MBIT SYNCHRONOUS DRAM
5	IS42S16160G	ISSI	256Mb SYNCHRONOUS DRAM
6	IS42S16160L	ISSI	256Mb SYNCHRONOUS DRAM
7	IS42S16100	Integrated Silicon Solution	512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
8	IS42S16100A1	ISSI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
9	IS42S16100C1	ISSI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
10	IS42S16100E	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
11	IS42S16100F	ISSI	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
12	IS42S16100H	ISSI	16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16160J - ISSI

IS42S16160J 256Mb SYNCHRONOUS DRAM

Features

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