IS42S16160 - Integrated Silicon Solution

IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM

A0-A12 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQML DQMH Vdd Vss Vddq Vssq NC Write Enable x16 Lower Byte, Input/Output Mask x16 Uppe.

Features

• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply IS42S16160 Vdd Vddq 3.3V 3.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst term.