IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply •.
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations ca.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS42S16100 |
Integrated Silicon Solution |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM | |
2 | IS42S16100A1 |
ISSI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
3 | IS42S16100C1 |
ISSI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
4 | IS42S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM | |
5 | IS42S16100H |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM | |
6 | IS42S16128 |
Integrated Silicon |
128K words x 16 Bits x 2 Banks SDRAM | |
7 | IS42S16160 |
Integrated Silicon Solution |
16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
8 | IS42S16160B |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
9 | IS42S16160C |
ISSI |
256Mb Single Data Rate Synchronous DRAM | |
10 | IS42S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
11 | IS42S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM | |
12 | IS42S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM |