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ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. Copyright © 2023 Integrated Silicon Solution, Inc. All rights reserved. ISSI rese.
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• B.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS42S16100 |
Integrated Silicon Solution |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM |
|
| 2 | IS42S16100A1 |
ISSI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 3 | IS42S16100C1 |
ISSI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 4 | IS42S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
|
| 5 | IS42S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
|
| 6 | IS42S16128 |
Integrated Silicon |
128K words x 16 Bits x 2 Banks SDRAM |
|
| 7 | IS42S16160 |
Integrated Silicon Solution |
16Meg x16 256-MBIT SYNCHRONOUS DRAM |
|
| 8 | IS42S16160B |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
|
| 9 | IS42S16160C |
ISSI |
256Mb Single Data Rate Synchronous DRAM |
|
| 10 | IS42S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
|
| 11 | IS42S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
| 12 | IS42S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM |
|