IS41C4100 - Integrated Silicon Solution

IS41C4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word. These features make the IS41C4100 and IS41LV4100 ideally suited for high ba.

Features

• TTL compatible inputs and outputs
• Refresh Interval: 1024 cycles/16 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100)
• Industrail Temperature Range -40oC to 85oC www.DataSheet4U.com ISSI ® PRELIMINARY INFORMATION SEPTEMBER 2001 DESCRIPTION The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle .