The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems. T.
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• Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: -- 5V ± 10% (IS41C16257) -- 3.3V ± 10% (IS41LV16257) Byte Write and Byte Read operation via two CAS Industrial temperature available
ISSI
MAY 1999
®
DESCRIPTION
The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS41C16256 |
ISSI |
256K x 16 (4-MBIT) DYNAMIC RAM | |
2 | IS41C16256A |
Integrated Silicon Solution |
256K x 16 (4-MBIT) DYNAMIC RAM | |
3 | IS41C16257A |
Integrated Silicon Solution |
256K x 16 (4-MBIT) DYNAMIC RAM | |
4 | IS41C16100 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
5 | IS41C16100S |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
6 | IS41C16105 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
7 | IS41C16128 |
ISSI |
128K x 16 (2-MBIT) DYNAMIC RAM | |
8 | IS41C4100 |
Integrated Silicon Solution |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
9 | IS41C44002 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM | |
10 | IS41C44004 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM | |
11 | IS41C44052 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM | |
12 | IS41C44054 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM |