IS41C16105 - Integrated Silicon Solution

IS41C16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

The 1+51 IS41C16105 and IS41LV16105 are 1,048,576 x The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -50 50 13 .

Features

www.DataSheet4U.com 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: 1,024 cycles/16 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16105) 3.3V ± 10% (IS41LV16105) • Byte Write and Byte Read operation via two CAS • Industrail temperature range -40oC to 85oC 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Wri.