IS41C44004 - Integrated Silicon Solution

IS41C44004 4M x 4 (16-MBIT) DYNAMIC RAM

The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the 4400 Series ideally suited for high-bandwi.

Features

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
  – 2,048 cycles/32 ms
  – 4,096 cycles/64 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• Single power supply:
  – 5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40°C to 85°C DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with.