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IS41C4100 |
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| Part Number | IS41C4100 |
| Manufacturer | Integrated Silicon Solution |
| Description | The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random ... |
| Features |
• TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100) • Industrail Temperature Range -40oC to 85oC www.DataSheet4U.com ISSI ® PRELIMINARY INFORMATION SEPTEMBER 2001 DESCRIPTION The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle ... |
| Document |
 IS41C4100 Data Sheet
PDF 179.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS41C44002 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM |
|
| 2 | IS41C44004 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM |
|
| 3 | IS41C44052 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM |
|
| 4 | IS41C44054 |
Integrated Silicon Solution |
4M x 4 (16-MBIT) DYNAMIC RAM |
|
| 5 | IS41C16100 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|