IS41C16105 |
Part Number | IS41C16105 |
Manufacturer | Integrated Silicon Solution |
Description | The 1+51 IS41C16105 and IS41LV16105 are 1,048,576 x The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2. KEY TIMING PARAMETERS Parameter Max. RAS Acces... |
Features |
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1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
TTL compatible inputs and outputs; tristate I/O Refresh Interval: 1,024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden JEDEC standard pinout Single power supply: 5V ± 10% (IS41C16105) 3.3V ± 10% (IS41LV16105) Byte Write and Byte Read operation via two CAS Industrail temperature range -40oC to 85oC
16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Wri... |
Document |
IS41C16105 Data Sheet
PDF 554.78KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS41C16100 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
2 | IS41C16100S |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
3 | IS41C16128 |
ISSI |
128K x 16 (2-MBIT) DYNAMIC RAM | |
4 | IS41C16256 |
ISSI |
256K x 16 (4-MBIT) DYNAMIC RAM | |
5 | IS41C16256A |
Integrated Silicon Solution |
256K x 16 (4-MBIT) DYNAMIC RAM |