IRLI530NPbF - Infineon

IRLI530NPbF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a .

Features

e Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRLI530NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Part Number IRLI530NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally.