$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLI520G |
International Rectifier |
POWER MOSFET | |
2 | IRLI520G |
Vishay |
Power MOSFET | |
3 | IRLI520N |
International Rectifier |
POWER MOSFET | |
4 | IRLI520NPBF |
International Rectifier |
POWER MOSFET | |
5 | IRLI520NPbF |
Infineon |
Power MOSFET | |
6 | IRLI530A |
Fairchild Semiconductor |
HEXFET Power MOSFET | |
7 | IRLI530G |
International Rectifier |
Power MOSFET | |
8 | IRLI530G |
Vishay |
Power MOSFET | |
9 | IRLI530N |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRLI530NPBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRLI530NPbF |
Infineon |
Power MOSFET | |
12 | IRLI540A |
Fairchild Semiconductor |
Power MOSFET |