$GYDQFHG 3RZHU 026)(7 IRLW/I540A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Pea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLI540G |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRLI540G |
Vishay |
Power MOSFET | |
3 | IRLI540N |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRLI540NPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLI540NPbF |
Infineon |
Power MOSFET | |
6 | IRLI510A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET | |
7 | IRLI520G |
International Rectifier |
POWER MOSFET | |
8 | IRLI520G |
Vishay |
Power MOSFET | |
9 | IRLI520N |
International Rectifier |
POWER MOSFET | |
10 | IRLI520NPBF |
International Rectifier |
POWER MOSFET | |
11 | IRLI520NPbF |
Infineon |
Power MOSFET | |
12 | IRLI530A |
Fairchild Semiconductor |
HEXFET Power MOSFET |