IRLI520N - International Rectifier

IRLI520N POWER MOSFET

l l IRLI520N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID =8.1A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, .

Features

ard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounti.