IRLI530A - Fairchild Semiconductor

IRLI530A HEXFET Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Typ.) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3.

Features

♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Typ.) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Si.