l D VDSS =100V G11 S RDS(on) = 0.10Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex.
in a typical surface mount application. The through-hole version (IRL530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperatur.
Isc N-Channel MOSFET Transistor IRL530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL530N |
IRF |
HEXFET Power MOSFET | |
2 | IRL530N |
INCHANGE |
N-Channel MOSFET | |
3 | IRL530NL |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRL530NL |
INCHANGE |
N-Channel MOSFET | |
5 | IRL530NLPbF |
International Rectifier |
Power MOSFET | |
6 | IRL530NPBF |
International Rectifier |
Power MOSFET | |
7 | IRL530NSPbF |
International Rectifier |
Power MOSFET | |
8 | IRL530 |
Fairchild Semiconductor |
Power MOSFET | |
9 | IRL530 |
International Rectifier |
Power MOSFET | |
10 | IRL530 |
Vishay |
Power MOSFET | |
11 | IRL530A |
Fairchild |
Advanced Power MOSFET | |
12 | IRL530S |
Vishay |
Power MOSFET |