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IRL530NS |
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| Part Number | IRL530NS |
| Manufacturer | IRF |
| Description | l D VDSS =100V G11 S RDS(on) = 0.10Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ... |
| Features |
in a typical surface mount application. The through-hole version (IRL530NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperatur... |
| Document |
 IRL530NS Data Sheet
PDF 281.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL530N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL530N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRL530NL |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRL530NL |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL530NLPbF |
International Rectifier |
Power MOSFET |
|