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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.
le for lowprofile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-t.
IRL530NL - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input r.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL530N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL530N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRL530NLPbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRL530NPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRL530NS |
IRF |
HEXFET Power MOSFET |
|
| 6 | IRL530NS |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRL530NSPbF |
International Rectifier |
Power MOSFET |
|
| 8 | IRL530 |
Fairchild Semiconductor |
Power MOSFET |
|
| 9 | IRL530 |
International Rectifier |
Power MOSFET |
|
| 10 | IRL530 |
Vishay |
Power MOSFET |
|
| 11 | IRL530A |
Fairchild |
Advanced Power MOSFET |
|
| 12 | IRL530S |
Vishay |
Power MOSFET |
|